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rcl-radio.ru | Основные параметры IGBT транзистора HGTD10N50F1S9AОсновные параметры IGBT транзистора HGTD10N50F1S9A
- Структура (технология): IGBT
- Тип канала: N-Channel
- Максимальная рассеиваемая мощность коллектора (Pc max): 75W
- Предельное постоянное напряжение коллектор - эмиттер (Uce max): 500V
- Напряжение насыщения коллектор-эмиттер (Ucesat): 2.5V
- Предельное постоянное напряжение коллектор - затвор (Ucg max): 500V
- Предельное постоянное напряжение эмиттер - затвор (Ueb max): ±20V
- Предельный постоянный ток коллектора (Ic max): 12A
- Предельная температура p-n перехода (Tj max): 150°C
- Время включения/выключения (Fr): 45/130nS
- Производитель: HARRIS
- Тип корпуса: DPAK
- Найти datasheet
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