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rcl-radio.ru | Основные параметры биполярного транзистора 2S175Основные параметры биполярного транзистора 2S175
- Материал: Ge
- Структура: pnp
- Максимальная рассеиваемая мощность (Pк): 55mW
- Макcимально допустимое напряжение коллектор-база (Uкб): 18V
- Макcимальный постоянный ток коллектора (Iк): 55mA
- Предельная температура PN-перехода (Tj): 75°C
- Граничная частота коэффициента передачи тока (ft): 40MHz
- Статический коэффициент передачи тока в схеме с общим эмиттером (Hfe): 80
- Емкость коллекторного перехода (Cc): 3 pF
- Производитель: TOSHIBA
- Корпус: TO44-1
- Найти datasheet
Похожие по параметрам:
| Транз. | Матер. | Струк. | Pk | Uкб | Uкэ | Uэб | Iк | ft | hfe | Корпус| 2N1436 |
Ge | pnp | 50mW | 15V | - | - | 50mA | - | 20 (min) | TO9 | | 2N1742 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 150MHz | 10 (min) | TO9 | | 2N1743 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 190MHz | 10 (min) | TO9 | | 2N1744 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 190MHz | 10 (min) | TO9 | | 2N1745 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 100MHz | 10 (min) | TO9 | | 2N1746 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 20MHz | 10 (min) | TO9 | | 2N1747 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 35MHz | 10 (min) | TO9 | | 2N1787 |
Ge | pnp | 45mW | 15V | - | - | 50mA | 10MHz | 25 (min) | TO9 | | 2N1864 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 5MHz | 20 (min) | TO9 | | 2N1865 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 30MHz | 60 (min) | TO9 | | 2N1868 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 80MHz | 10 (min) | TO9 | | 2N2360 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | 2N2361 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | 2N2362 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | 2N2398 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | 2N2399 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | 2N503 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 175MHz | 45 | TO9 | | 2N588A |
Ge | pnp | 60mW | 15V | - | - | 50mA | 60MHz | 30 (min) | TO1 | | 2S33 |
Ge | pnp | 50mW | 20V | - | - | 50mA | 600KHz | 70 | TO1 | | 2SA1228 |
Si | pnp | 50mW | 20V | - | - | 50mA | 4GHz | 60 (min) | TO72 | | 2SA1229 |
Si | pnp | 50mW | 20V | - | - | 50mA | 4GHz | 90 (min) | TO71-2 | | 2SA1230 |
Si | pnp | 50mW | 15V | - | - | 50mA | 8GHz | 120 (min) | TO131 | | 2SA1231 |
Si | pnp | 50mW | 15V | - | - | 50mA | 8GHz | 150 | TO71-2 | | 2SA166 |
Ge | pnp | 50mW | 20V | - | - | 50mA | 150MHz | 65 | TO18 | | 2SA291 |
Ge | pnp | 50mW | 20V | - | - | 50mA | 45MHz | 40 | TO1 | | T1322 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 175MHz | 45 | TO9 | | T1657 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 35MHz | 10 (min) | TO9 | | T1814 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 20MHz | 10 (min) | TO9 | | T1832 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 150MHz | 10 (min) | TO9 | | T1833 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 190MHz | 10 (min) | TO9 | | T1858 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 100MHz | 10 (min) | TO9 | | T1859 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 190MHz | 10 (min) | TO9 | | T2017 |
Ge | pnp | 45mW | 15V | - | - | 50mA | 10MHz | 25 (min) | TO9 | | T2018 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 80MHz | 10 (min) | TO9 | | T2020 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 5MHz | 20 (min) | TO9 | | T2024 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 30MHz | 60 (min) | TO9 | | T2028 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | T2029 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | T2030 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | T2578 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | T2579 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | | T2580 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | T2588 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | T2589 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 800MHz | 10 (min) | TO33-1 | | T2679 |
Ge | pnp | 60mW | 20V | - | - | 50mA | 200MHz | 10 (min) | TO33-1 | |
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